GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD

Balcı M., Boz M. A., Demir İ., Kılıç D., Elagoz S.

TURKISH PHYSICAL SOCIETY 30th INTERNATIONAL PHYSICS CONGRESS, İstanbul, Türkiye, 2 - 09 Eylül 2013, ss.141

  • Yayın Türü: Bildiri / Özet Bildiri
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.141
  • Erciyes Üniversitesi Adresli: Hayır

Özet

Heteroepitaxial growths of GaAs layers on Ge substrates have received a significant attention

due to their closely matched lattice constants and thermal expansion coefficients. This study is

first part of InxGa1-xP/InyGa1-yAs/Ge high efficiency tandem solar cell project which is

supported by TÜBİTAK. In this study epitaxial GaAs thin films grown by Metalorganic

Chemical Vapor Deposition (MOCVD) on Ge [100] substrates with a 60 off orientation

towards the nearest [111] direction. Root mean square roughness (rms) and surface

morphology of epitaxial GaAs layers were investigated by contact-mode Park System XE-100

Atomic force microscopy (AFM). Also growth temperature effect on surface morphology of

GaAs layers was investigated.