Balcı, M. Et Al. 2013. GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD. TURKISH PHYSICAL SOCIETY 30th INTERNATIONAL PHYSICS CONGRESS , (İstanbul, Turkey), 141.

Balcı, M., Boz, M. A., Demir, İ., Altuntaş, İ., Kılıç, D., & Elagoz, S., (2013). GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD . TURKISH PHYSICAL SOCIETY 30th INTERNATIONAL PHYSICS CONGRESS (pp.141). İstanbul, Turkey

Balcı, MURAT Et Al. "GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD," TURKISH PHYSICAL SOCIETY 30th INTERNATIONAL PHYSICS CONGRESS, İstanbul, Turkey, 2013

Balcı, MURAT Et Al. "GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD." TURKISH PHYSICAL SOCIETY 30th INTERNATIONAL PHYSICS CONGRESS , İstanbul, Turkey, pp.141, 2013

Balcı, M. Et Al. (2013) . "GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD." TURKISH PHYSICAL SOCIETY 30th INTERNATIONAL PHYSICS CONGRESS , İstanbul, Turkey, p.141.

@conferencepaper{conferencepaper, author={MURAT BALCI Et Al. }, title={GROWTH TEMPERATURE EFFECTS ON SURFACE MORPHOLOGY OF EPITAXIAL GAAS LAYERS GROWN BY MOCVD}, congress name={TURKISH PHYSICAL SOCIETY 30th INTERNATIONAL PHYSICS CONGRESS}, city={İstanbul}, country={Turkey}, year={2013}, pages={141} }