High quality epitaxial c-axis oriented (BiPb)(2)Sr2Ca2CU3Ox thin films have been fabricated on the single crystal MgO (001) substrates using radio frequency sputtering technique. The resistive transition of the films has been measured under applied magnetic field, parallel to the c-axis, up to 6 T. The results obtained showed that dissipative resistivity can be well fitted by thermally activated flux motion below critical temperature, T, under a magnetic field. In the thermally activated flux flow region the temperature and field dependence of the activation energy has been investigated. The m value from 1.38 to 1.45 and alpha value 0.301 to 0.659 were calculated. The results obtained suggested that all samples show 3D-like behavior and the thermally activated flux flow is the dominant mechanism for the films prepared in this work. (C) 2007 Elsevier B.V. All rights reserved.