Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.37, sa.14, 2026 (SCI-Expanded, Scopus)
This study reports the fabrication and comprehensive analysis of an Al/NC/p-Si metal-insulator-semiconductor (MIS) structure, incorporating nanocellulose (NC) as an insulating interfacial layer at the metal/semiconductor junction for the first time. The NC material was rigorously characterized through dynamic light scattering (DLS), zeta potential analysis, ultraviolet-visible (UV-Vis) absorption spectroscopy, Raman spectroscopy, and scanning transmission electron microscopy (STEM). The electrical properties of the Al/NC/p-Si structure were systematically investigated via the current-voltage (I-V) and capacitance-voltage (C-V) measurements under dark and illuminated conditions at room temperature. The I-V analysis revealed an ideality factor (n) of 1.72 and a zero-bias barrier height (Phi(B)) of 0.80 eV, with deviations from ideality ascribed to the NC interfacial layer, interfacial state distribution, and elevated series resistance within the p-Si substrate. The series resistance (Rs) was further evaluated using the Norde and Cheung methodologies. The frequency-dependent analyses of the capacitance (C-V) and conductance (G-V) characteristics were performed, with results critically compared to literature. These findings underscore the promising insulating properties of nanocellulose and highlight its potential for application in electronic devices.