Production of p-CuO/n-ZnO:Co nanocomposite heterostructure thin films: An optoelectronic study

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KAHVECİ O., Akkaya A., Yucel E., Aydin R., Sahin B.

CERAMICS INTERNATIONAL, cilt.49, sa.10, ss.16458-16466, 2023 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 49 Sayı: 10
  • Basım Tarihi: 2023
  • Doi Numarası: 10.1016/j.ceramint.2023.02.007
  • Dergi Adı: CERAMICS INTERNATIONAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.16458-16466
  • Erciyes Üniversitesi Adresli: Evet

Özet

The p-n junction is the principal mode of optoelectronic semiconductor material. At present, we submit a solution-based attempt at the synthesis of nanostructured p-type CuO and n-type ZnO nanocomposite (NC) heterostructure films. Bare and Cobalt (Co)-doped CuO-ZnO NC films have been produced on glass slides using the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The influence of Co-doping concentration on the physical characteristics of CuO-ZnO NC heterostructure films was investigated. XRD spectrums indicated the phase and structural purity of solution-based synthesized CuO-ZnO NC samples. The surface topographical, as well as optical and electrical properties of heterostructure films were, also investigated. While the bare CuO-ZnO NC film has a-38% transmission near 1000 nm wavelength region, the 2.0% Co-doped CuO-ZnO NC film has-31% of optical transmission. The sheet resistance value of the grown 2.0% Co:CuO-ZnO NC sample is almost 13 times lower than that of the bare CuO-ZnO NC sample at 400 K temperature. As a consequence, our attempt ensures a novel strategy for the production and performance optimization of CuO-ZnO NC hetero-structures in the implementation of optoelectronics.