Akademik Veri Yönetim Sistemi
IEEE International Conference on Oxide Materials for Electronic Engineering - Fabrication, Properties and Applications (OMEE), Lviv, Ukrayna, 26 - 30 Mayıs 2014, ss.159-160
Mn-4 doped and Pr-3+,Pr-4, Sm-3, Gd-3, Tb-3+,Tb-4, Ho3+, Er3+, Tm-3 and Yb3+ co-doped MgAl2Si2O8-based phosphors were prepared by conventional solid state synthesis at 1300 degrees C. They were characterized by thermogravimetry (TG), differential thermal analysis (DTA), X-ray powder diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). The luminescence mechanism of the phosphors, which showed broad red emission bands in the range of 600-715 nm and had a different maximum intensity when activated by UV illumination, was discussed. Such a red emission can be attributed to the intrinsic E-2 ->(4)A(2) transitions of Mn-4.