Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes

Akkaya A., KARAASLAN T., Dede M., Cetin H., AYYILDIZ E.

THIN SOLID FILMS, cilt.564, ss.367-374, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 564
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1016/j.tsf.2014.05.007
  • Dergi Adı: THIN SOLID FILMS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.367-374
  • Anahtar Kelimeler: Metal-semiconductor devices, Electrical properties, Aluminum gallium nitride, Schottky barrier diodes, Current-voltage-temperature characteristics, Gaussian distribution, Thermionic emission theory, Barrier inhomogeneity, I-V-T, CURRENT-VOLTAGE CHARACTERISTICS, LEAKAGE CURRENT MECHANISMS, HEIGHT INHOMOGENEITIES, IDEALITY FACTORS, GAN, CONTACTS, TRANSPORT, ALGAN/GAN, FIELD
  • Erciyes Üniversitesi Adresli: Evet

Özet

The current-voltage (I-V) characteristics of the Ni/Al026Ga0.74N Schottky barrier diodes (SBDs) were measured in the temperature range of 100-310 K by the step of 10 K. The forward I-V characteristics were analyzed on the basis of the thermionic emission theory. The characteristics of diode parameters such as the Schottky height (SBH) and the ideality factor were investigated as a function of temperature. An experimental SBH value about 1.021 eV was obtained for the Ni/Al026Ga0.74N SBD at 300 K. The experimental results show that the values of the ideality factor decrease while the values of the SBH increase with increasing temperature. The temperature dependence of the SBH was explained on the basis of a thermionic emission mechanism with the Gaussian distribution of the SBHs due to the SBH inhomogeneities at the metal-semiconductor interface. The values the mean barrier height (Phi) over bar (bo) and the standard deviation sigma(s0) were 1.362 eV and 133 may in the temperature range of 210-300 K, 1204 eV and 111 meV in the temperature range of 100-210 K, respectively. The modified Richardson plots according to inhomogeneity of the SBHs have a good linearity in the corresponding temperature range. The values of Richardson constant A* were found to be 31.46 Acm(-2) K-2 and 3336 Acm(-2) K-2 in the temperature ranges of 210-310 K and 100-210 K, respectively. The obtained Richardson constant values are good agreement with the theoretical value of 34.56 Acm(-2) K-2 known for n-type Al0.26Ga0.74N. (C) 2014 Elsevier B.V. All rights reserved.

The current–voltage (I–V) characteristics of the Ni/Al0.26Ga0.74N Schottky barrier diodes (SBDs) were measured

in the temperature range of 100–310 K by the step of 10 K. The forward I–V characteristics were analyzed on

the basis of the thermionic emission theory. The characteristics of diode parameters such as the Schottky barrier

height (SBH) and the ideality factorwere investigated as a function of temperature. An experimental SBH value of

about 1.021 eVwas obtained for the Ni/Al0.26Ga0.74N SBD at 300 K. The experimental results showthat the values

of the ideality factor decreasewhile the values of the SBH increasewith increasing temperature. The temperature

dependence of the SBH was explained on the basis of a thermionic emission mechanism with the Gaussian

distribution of the SBHs due to the SBH inhomogeneities at the metal–semiconductor interface. The values of

the mean barrier height Φb0 and the standard deviation σs0 were 1.362 eV and 133 meV in the temperature

range of 210–300 K, 1.204 eV and 111 meV in the temperature range of 100–210 K, respectively. The modified

Richardson plots according to inhomogeneity of the SBHs have a good linearity in the corresponding temperature

range. The values of Richardson constant A* were found to be 31.46 Acm−2 K−2 and 33.36 Acm−2 K−2 in the

temperature ranges of 210–310 K and 100–210 K, respectively. The obtained Richardson constant values are in

good agreement with the theoretical value of 34.56 Acm−2 K−2 known for n-type Al0.26Ga0.74N.