Single model proposed for the combination of narrow and wide GaAs wells for the computation of the linewidth enhancement factor

CELEBI F., Danisman K., YILDIRIM R.

Conference on Photonics - Design, Technology and Packaging, Perth, Avustralya, 10 - 12 Aralık 2003, cilt.5277, ss.350-355 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 5277
  • Doi Numarası: 10.1117/12.523313
  • Basıldığı Şehir: Perth
  • Basıldığı Ülke: Avustralya
  • Sayfa Sayıları: ss.350-355
  • Erciyes Üniversitesi Adresli: Evet

Özet

A different method and single model to determine the linewidth enhancement factor (a (Alpha) parameter) for narrow and wide GaAs Quantum-wells (QWs) as a function of modal peak gain and current density is presented. Based on the Artificial Neural Network (ANN) modeling approach, different learning algorithms are trained and tested. Both the training and the test results are in very good agreement with the experimental results reported elsewhere.