MOS Transistor Based Low Power and High Speed Fundamental Logic Gates

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Atıf İçin Kopyala

Emir R., Tekin S. A.

Erciyes Üniversitesi Fen Bilimleri Enstitüsü Dergisi, cilt.39, sa.1, ss.126-131, 2023 (Hakemli Dergi)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 39 Sayı: 1
• Basım Tarihi: 2023
• Dergi Adı: Erciyes Üniversitesi Fen Bilimleri Enstitüsü Dergisi
• Derginin Tarandığı İndeksler: TR DİZİN (ULAKBİM)
• Sayfa Sayıları: ss.126-131
• Erciyes Üniversitesi Adresli: Evet

Özet

In this paper, low voltage, low power, high speed and full swing, 1V MOS transistor based fundamental logic gates at 1GHz operation frequency are examined. The main purpose of this work is to comprehend basic ideas related to logic gate and circuit design research field and lay the foundation for novel design methods. The other purpose is to show that these full swing logic gates can be performed under low voltage and high speed conditions. Furthormore, MOS transistor based non-full swing logic gates and how to do them full swing are also examined. Waveforms and numerical results of examined structure's simulations show that MOS transistor based fundamental logic gates can be acquired at 1V supply voltage and 1GHz operation frequency levels. Theoretical results have been confirmed by HSPICE using 65nm CMOS process technology.