Temperature-dependence of electrical resistivity of Cd-Sn, Bi-Sn, and Al-Si eutectic and Al-3wt.%Si hypoeutectic alloys


Cadirli E. , Kaya H. , Guemues A., Yilmazer I.

JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE, cilt.15, ss.490-493, 2006 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 15 Konu: 4
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1361/105994906x124578
  • Dergi Adı: JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE
  • Sayfa Sayıları: ss.490-493

Özet

Cd-Sn, Bi-Cd, and Al-Si eutectic and Al-3wt.%Si hypoeutectic alloys of high-purity (99.99%) metals were produced in a vacuum atmosphere. Current-voltage (I-V) characteristics of these specimens were measured at various temperatures between 100 and 475 K. The electrical resistivity (p) and temperature coefficient (alpha) for each specimen, depending on the temperature, were calculated using results obtained from the I-V measurements. The electrical resistivities and the residual resistivity of the specimens increase with increasing temperature for each alloy system. These results are compared with literature results.