Temperature-dependence of electrical resistivity of Cd-Sn, Bi-Sn, and Al-Si eutectic and Al-3wt.%Si hypoeutectic alloys

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Cadirli E., Kaya H., Guemues A., Yilmazer I.

JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE, vol.15, no.4, pp.490-493, 2006 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 15 Issue: 4
  • Publication Date: 2006
  • Doi Number: 10.1361/105994906x124578
  • Journal Name: JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.490-493
  • Keywords: crystal growth, electrical properties, metals and alloys, ALUMINUM
  • Erciyes University Affiliated: No

Abstract

Cd-Sn, Bi-Cd, and Al-Si eutectic and Al-3wt.%Si hypoeutectic alloys of high-purity (99.99%) metals were produced in a vacuum atmosphere. Current-voltage (I-V) characteristics of these specimens were measured at various temperatures between 100 and 475 K. The electrical resistivity (p) and temperature coefficient (alpha) for each specimen, depending on the temperature, were calculated using results obtained from the I-V measurements. The electrical resistivities and the residual resistivity of the specimens increase with increasing temperature for each alloy system. These results are compared with literature results.