ELECTRICAL INSULATION PROPERTIES OF OXIDE COATINGS DEPOSITED BY MAGNETRON SPUTTERING METHOD

Danışman Ş., Yılmaz Ç., Kesriklioğlu S., Akkaya A., Ersoy E., Sayın A. Ç.

5TH INTERNATIONAL BLACK SEA MODERN SCIENTIFIC RESEARCH CONGRESS, Rize, Türkiye, 8 - 10 Kasım 2023, cilt.2, ss.40-46

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 2
  • Basıldığı Şehir: Rize
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.40-46
  • Erciyes Üniversitesi Adresli: Evet

Özet

The electrical properties of thin films are of both practical importance and theoretical interest.

Applications, especially in the solid state field, reveal important new roles for insulators.

The microstructure of thin films depends on the parameters and process of the growth

processes. Many parameters such as film growth, film density, surface area and structure, and

grain size affect the properties of the film. Thin films are sensitively affected by various

deposition parameters such as substrate temperature, structure of the substrate surface, gas

pressure, sputtering power, distance between substrate and target, film thickness, and film

density.

Many coating methods have been developed to deposit oxide coatings on base materials. The

most commonly used methods today are cathodic arc evaporation, ion beam growth, and

magnetron sputtering, which have high deposition rates. These methods are carried out in

plasma (ionized gas environment) obtained in a vacuum environment. The properties of the

coatings may vary depending on the oxygen partial pressure and gas concentration used in the

working environment.

In this study, oxide coating layers obtained by magnetron sputtering method were examined.

The relationship between the electrical properties of insulating films and the way they are

deposited or grown has been investigated.