Graphene growth by Inductively-Coupled Plasma Chemical Vapor Deposition at Low Temperature


PEKDEMİR S. , ÖNSES M. S. , HANÇER M.

Graphene & Related Materials Conference (GRM-2016), Ankara, Turkey, 13 - 15 July 2016, pp.67

  • Publication Type: Conference Paper / Full Text
  • City: Ankara
  • Country: Turkey
  • Page Numbers: pp.67

Abstract

The outstanding electrical, mechanical, optical and thermal properties of graphene, resulted in tremendous interest on this material for potential applications that include touch screens, light emitting diodes and printed electronics.1-3 Several recent studies showed that a highly promising approach to grow graphene at reduced temperatures and processing times is to use plasma enhanced CVD (PECVD). Here the excitement of the reactant gases by the plasma lowers the activation energy for the growth of graphene and provides a low temperature route. The previous studies used PECVD systems that rely on surface wave plasma,4 microwave plasma,5 plasma assisted thermal CVD,6 inductively coupled plasma CVD,7, 8 and pulsed DC plasma reactor11 to synthesize graphene at temperatures between 300 oC to 950 oC. This study for the growth of graphene at a low temperature of 300 oC using an inductively-coupled plasma chemical vapor deposition system. The results indicate bilayer graphene films with an intensity ratio (I2D/IG) of 2D band to G that equals to 1.1 and a thickness of 0.68 nm grown at low flow rates of CH4 and low plasma powers for depositions as short as 20 s.

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