A novel approach for the temperature dependence of the saturated signal power in EDFAs


Berkdemir C., Ozsoy S.

OPTICAL AND QUANTUM ELECTRONICS, cilt.37, sa.8, ss.789-797, 2005 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 37 Sayı: 8
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1007/s11082-005-0370-x
  • Dergi Adı: OPTICAL AND QUANTUM ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.789-797
  • Erciyes Üniversitesi Adresli: Evet

Özet

The temperature dependence of the saturated signal power for the I-4(13/2) -> I-4(15/2) transition in erbium-doped fiber amplifiers (EDFAs) pumped at 980 nm and 1480 nm pumping wavelengths within a temperature range from -20 to 60 degrees C are investigated by a novel approach. This approach is based on the temperature dependence of the saturated signal power. The influence of pump excited-state absorption (ESA) is inserted into the rate equations so as to investigate a generally situation. For 1480 nm pumping regime, it is seen that the saturated signal power increases more quickly than that of 980 nm pumping regime, with the increasing temperature. The variation in the saturated signal power with temperature is nearly constant at 980 nm pumping regime. In addition, the population inversion with respect to the increasing normalized signal power is examined and it is seen that it is independent temperature for 980 nm but it strongly depends on temperature for 1480 nm especially at lower normalized signal powers.