Synthesis and characterization of vanadium oxide thin films on different substrates


pakma o., özaydın c., özden ş., KARİPER I. A. , güllü ö.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.28, no.15, ss.10909-10913, 2017 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 28 Konu: 15
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1007/s10854-017-6870-1
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Sayfa Sayıları: ss.10909-10913

Özet

In this study, the V8O15 derivative of vanadium oxide was produced on plain glass, indium tin oxide and silicon wafer substrate layers by taking advantage of wet chemical synthesis which is an easy and economical method. The structural properties of the produced films were examined by XRD and SEM analyses. Besides, Al/VOx/p-Si metal-oxide-semiconductor (MOS) structure was obtained by the same synthesis method. Doping densities of these MOS structures were calculated from frequency dependent capacitance-voltage measurements. It was determined that the interface states which were assigned with the help of these parameters vary according to frequency.