The effect of series resistance on calculation of the interface state density distribution in Schottky diodes

Ayyildiz E. , Temirci C., Bati B., Turut A.

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.88, ss.625-633, 2001 (SCI İndekslerine Giren Dergi) identifier

  • Cilt numarası: 88 Konu: 6
  • Basım Tarihi: 2001
  • Doi Numarası: 10.1080/00207210110044396
  • Sayfa Sayıları: ss.625-633


This work presents an attempt related to the importance of the fact that the series resistance value is considered in calculating the interface state density distribution from the non-ideal forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes (SBDs). To examine the consistency of this approach, Au/n-Si SBDs with Si bulk thicknesses of 200 and 400 mum have been prepared. Both diodes showed non-ideal I-V behaviour with ideality factors of 1.14 and 1.12, respectively, and thus it has been thought that the diodes have a metal-interface layer-semiconductor configuration. At the same energy position near the bottom of the conduction band, the interface state density (N-SS) values, without taking into account the series resistance value of the devices, are almost one order of magnitude larger than the N-SS values obtained taking into account the series resistance value.