The effect of annealing temperature on the structural, optical, and electrical properties of CdS films


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Metin H., ARI M. , Erat S., Durmuş S., Bozoklu M., Braun A.

JOURNAL OF MATERIALS RESEARCH, cilt.25, ss.189-196, 2010 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 25 Konu: 1
  • Basım Tarihi: 2010
  • Doi Numarası: 10.1557/jmr.2010.0025
  • Dergi Adı: JOURNAL OF MATERIALS RESEARCH
  • Sayfa Sayıları: ss.189-196

Özet

Cadmium sulfide (CdS) photocatalyst films were grown on glass by chemical bath deposition (pH 9.4, 70 degrees C) and then annealed in nitrogen from 423 K to 823 K in steps of 100 K. The XRD crystallite size increases in a sigmoidal manner from 60 nm to 100 nm while the optical band gap energy decreases from 2.42 eV to 2.28 eV. This trend is paralleled by the decreasing Urbach energy, but only up to 623 K, where it increases again. This is the temperature where the Cd effectively surpasses the phase transformation from cubic to hexagonal, and the activation energy for electronic transport drops by a factor of nearly two.