The effect of annealing temperature on the structural, optical, and electrical properties of CdS films


Creative Commons License

Metin H., ARI M. , Erat S., Durmuş S., Bozoklu M., Braun A.

JOURNAL OF MATERIALS RESEARCH, vol.25, no.1, pp.189-196, 2010 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 25 Issue: 1
  • Publication Date: 2010
  • Doi Number: 10.1557/jmr.2010.0025
  • Title of Journal : JOURNAL OF MATERIALS RESEARCH
  • Page Numbers: pp.189-196

Abstract

Cadmium sulfide (CdS) photocatalyst films were grown on glass by chemical bath deposition (pH 9.4, 70 degrees C) and then annealed in nitrogen from 423 K to 823 K in steps of 100 K. The XRD crystallite size increases in a sigmoidal manner from 60 nm to 100 nm while the optical band gap energy decreases from 2.42 eV to 2.28 eV. This trend is paralleled by the decreasing Urbach energy, but only up to 623 K, where it increases again. This is the temperature where the Cd effectively surpasses the phase transformation from cubic to hexagonal, and the activation energy for electronic transport drops by a factor of nearly two.