A different approach for the computation of refractive index change in quantum-well diode lasers for different injection levels

CELEBI F., Danisman K.

5th International Symposium on Laser Precision Microfabrication, Nara, Japan, 11 - 14 May 2004, vol.5662, pp.384-388 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 5662
  • Doi Number: 10.1117/12.596373
  • City: Nara
  • Country: Japan
  • Page Numbers: pp.384-388
  • Erciyes University Affiliated: Yes


A model is developed for the carrier induced refractive-index change in Quantum-well (QW) lasers which affects different mechanisms. The model is based on Artificial Neural Network (ANN) which provides a powerful approach for setting up a complex non-linear model. Different algorithms are tried and tested for different injection current levels. Both the training and the test results for refractive-index change are in very good agreement with the experimental findings reported elsewhere.