Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

Ayyildiz E., Cetin H., Horvath Z.

APPLIED SURFACE SCIENCE, cilt.252, sa.4, ss.1153-1158, 2005 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 252 Sayı: 4
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.apsusc.2005.02.044
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1153-1158
  • Anahtar Kelimeler: thermionic-field emission, Schottky junctions, current-voltage and capacitance-voltage characteristics, CURRENT-VOLTAGE CHARACTERISTICS, THERMIONIC-FIELD EMISSION, I-V-MEASUREMENTS, BARRIER HEIGHT, N-TYPE, INTERFACIAL LAYER, RANGE, JUNCTIONS, CONTACTS, GAAS
  • Erciyes Üniversitesi Adresli: Evet

Özet

Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermonic-field emission resulted in the following parameters: characteristic energy E-00 = 9.8 meV, Schottky barrier height at zero bias phi(bO) = 0.802 eV, bias coefficient of barrier height beta = 0 and effective Richardson constant A* = 37.32 A cm(-2) K-2. (c) 2005 Elsevier B.V. All rights reserved.