Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

Ayyildiz E., Cetin H., Horvath Z.

APPLIED SURFACE SCIENCE, vol.252, no.4, pp.1153-1158, 2005 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 252 Issue: 4
  • Publication Date: 2005
  • Doi Number: 10.1016/j.apsusc.2005.02.044
  • Journal Name: APPLIED SURFACE SCIENCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1153-1158
  • Keywords: thermionic-field emission, Schottky junctions, current-voltage and capacitance-voltage characteristics, CURRENT-VOLTAGE CHARACTERISTICS, THERMIONIC-FIELD EMISSION, I-V-MEASUREMENTS, BARRIER HEIGHT, N-TYPE, INTERFACIAL LAYER, RANGE, JUNCTIONS, CONTACTS, GAAS
  • Erciyes University Affiliated: Yes

Abstract

Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermonic-field emission resulted in the following parameters: characteristic energy E-00 = 9.8 meV, Schottky barrier height at zero bias phi(bO) = 0.802 eV, bias coefficient of barrier height beta = 0 and effective Richardson constant A* = 37.32 A cm(-2) K-2. (c) 2005 Elsevier B.V. All rights reserved.