The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colony

KARABOĞA N., Kockanat S., Dogan H.

APPLIED INTELLIGENCE, cilt.38, sa.3, ss.279-288, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 38 Sayı: 3
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1007/s10489-012-0372-x
  • Dergi Adı: APPLIED INTELLIGENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.279-288
  • Erciyes Üniversitesi Adresli: Evet

Özet

In this paper, a new method based on the modified artificial bee colony (MABC) algorithm to determine the main characteristic parameters of the Schottky barrier diode such as barrier height, ideality factor and series resistance. For this model, the Ni/n-GaAs/In Schottky barrier diode was produced and annealed at different temperature in a laboratory. The performance of the modified ABC method was compared to that of the basic artificial bee colony (ABC), particle swarm optimization (PSO), differential evolution (DE), genetic algorithm (GA) and simulated annealing (SA). From the results, it is concluded that the modified ABC algorithm is more flexible and effective for the parameter determination than the other algorithms.