Akademik Veri Yönetim Sistemi
Journal of Materials Science: Materials in Electronics, cilt.34, sa.34, 2023 (SCI-Expanded)
The remarkable advancements achieved in the field of perovskite materials have spurred the development of photodetectors, playing a pivotal role in diverse optoelectronic applications. Among these, heterostructured perovskite-based photodetectors have emerged as a superior choice, surpassing the performance capabilities of their pure perovskite counterparts. This study presents the fabrication of an rGO/MAPbI3 heterostructured photodetector via the spin-coating technique. A comprehensive structural analysis of the device was conducted, encompassing X-ray diffraction, scanning electron microscopy, and Fourier-transform infrared spectroscopy. Current–voltage (I–V) and capacitance–voltage (C–V) measurements, performed under various illumination conditions as well as in the absence of light, unequivocally demonstrate the photodiode characteristics of the device. The data reveal a direct correlation between illumination intensity and both current and capacitance, substantiating the photodetector’s responsiveness. Notably, the calculated photosensitivity values S (%) of the Al/Gra/p-Si device, measured under a reverse bias of − 2 V, exhibit a range, varying from 42,000 to 79,300%. Furthermore, observations suggest a decrease in series resistance with increasing illumination intensity, while the ideality factor and barrier height values show an opposite trend. In addition, frequency-dependent measurements divulge a decrease in capacitance as the frequency escalates. These findings can be elucidated through the interactions involving light-induced charges at the interface between the rGO oxide layer and the semiconductor, coupled with the dynamic fluctuations in quasi-Fermi levels within the state of equilibrium.