In this study, a single, simple and an accurate computer-aided design model is developed in order to obtain the injection level dependence of the critical quantities of broad-area (with a width of 50 mu m or more) InGaAs deep quantum-well (QW) lasers. Each of these quantities (gain, refractive index variation, and alpha (alpha) parameter) requires lengthy mathematical calculations with the use of different theories, assumptions, approximations, and estimations of some parameter values. The model is based on artificial neural network (ANN) approach that the total computational time is in the order of microseconds for the whole quantities in order to get their accurate values. The results are in very good agreement with the previously obtained results from an InGaAs deep QW laser sample. (c) 2006 Elsevier GmbH. All rights reserved.