The effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55 mu m. InGaAsP semiconductor laser diodes

CELEBI F., OZYAZICI M., Danisman K.

SPIE Conference on Laser Diodes and Applications III, Quebec, Kanada, 15 - 16 Temmuz 1998, cilt.3415, ss.57-61 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 3415
  • Doi Numarası: 10.1117/12.326639
  • Basıldığı Şehir: Quebec
  • Basıldığı Ülke: Kanada
  • Sayfa Sayıları: ss.57-61
  • Erciyes Üniversitesi Adresli: Evet

Özet

In this study, different second harmonic distortion (2HD) levels of a 1.55 mu m. InGaAsP ridge waveguide laser diode are investigated by using a mathematical model based on multi-mode rate equations. The rate equations with an input current i are solved numerically by using fourth order Runge-Kutta algorithm for frequencies ranging from 1 GHz to 10 GHz with 1 GHz steps and the standard parameter values. The important parameters of 1.55 Gun. InGaAsP semiconductor lasers such as Auger recombination, non-radiative recombination, spontaneous emission lifetime and gain saturation are taken into account. The effects of some parameters on 2HD for different threshold levels are examined and computed graphically.