D. Shibata Et Al. , "1.7 kV / 1.0 m Omega cm(2) Normally-off Vertical GaN Transistor on GaN substrate with Regrown p-GaN/AlGaN/GaN Semipolar Gate Structure," 62nd Annual IEEE International Electron Devices Meeting (IEDM) , San-Francisco, Costa Rica, 2016
Shibata, D. Et Al. 2016. 1.7 kV / 1.0 m Omega cm(2) Normally-off Vertical GaN Transistor on GaN substrate with Regrown p-GaN/AlGaN/GaN Semipolar Gate Structure. 62nd Annual IEEE International Electron Devices Meeting (IEDM) , (San-Francisco, Costa Rica).
Shibata, D., Kajitani, R., Ogawa, M., Tanaka, K., Tamura, S., Hatsuda, T., ... Ishida, M.(2016). 1.7 kV / 1.0 m Omega cm(2) Normally-off Vertical GaN Transistor on GaN substrate with Regrown p-GaN/AlGaN/GaN Semipolar Gate Structure . 62nd Annual IEEE International Electron Devices Meeting (IEDM), San-Francisco, Costa Rica
Shibata, Daisuke Et Al. "1.7 kV / 1.0 m Omega cm(2) Normally-off Vertical GaN Transistor on GaN substrate with Regrown p-GaN/AlGaN/GaN Semipolar Gate Structure," 62nd Annual IEEE International Electron Devices Meeting (IEDM), San-Francisco, Costa Rica, 2016
Shibata, Daisuke Et Al. "1.7 kV / 1.0 m Omega cm(2) Normally-off Vertical GaN Transistor on GaN substrate with Regrown p-GaN/AlGaN/GaN Semipolar Gate Structure." 62nd Annual IEEE International Electron Devices Meeting (IEDM) , San-Francisco, Costa Rica, 2016
Shibata, D. Et Al. (2016) . "1.7 kV / 1.0 m Omega cm(2) Normally-off Vertical GaN Transistor on GaN substrate with Regrown p-GaN/AlGaN/GaN Semipolar Gate Structure." 62nd Annual IEEE International Electron Devices Meeting (IEDM) , San-Francisco, Costa Rica.
@conferencepaper{conferencepaper, author={Daisuke Shibata Et Al. }, title={1.7 kV / 1.0 m Omega cm(2) Normally-off Vertical GaN Transistor on GaN substrate with Regrown p-GaN/AlGaN/GaN Semipolar Gate Structure}, congress name={62nd Annual IEEE International Electron Devices Meeting (IEDM)}, city={San-Francisco}, country={Costa Rica}, year={2016}}