Dogan, H. Et Al. 2006. Determination of the characteristic parameters of Sn/n-GaAs/Al-Ge Schottky diodes by a barrier height inhomogeneity model. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.6 , 822-828.

Dogan, H., Yildirim, N., Turut, A., Biber, M., Ayyildiz, E., & Nuhoglu, C., (2006). Determination of the characteristic parameters of Sn/n-GaAs/Al-Ge Schottky diodes by a barrier height inhomogeneity model. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.6, 822-828.

Dogan, H Et Al. "Determination of the characteristic parameters of Sn/n-GaAs/Al-Ge Schottky diodes by a barrier height inhomogeneity model," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.6, 822-828, 2006

Dogan, H Et Al. "Determination of the characteristic parameters of Sn/n-GaAs/Al-Ge Schottky diodes by a barrier height inhomogeneity model." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.6, pp.822-828, 2006

Dogan, H. Et Al. (2006) . "Determination of the characteristic parameters of Sn/n-GaAs/Al-Ge Schottky diodes by a barrier height inhomogeneity model." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.6, pp.822-828.

@article{article, author={H Dogan Et Al. }, title={Determination of the characteristic parameters of Sn/n-GaAs/Al-Ge Schottky diodes by a barrier height inhomogeneity model}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2006, pages={822-828} }