Cetin, H. Et Al. 2005. Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation. PHYSICA B-CONDENSED MATTER , vol.364 , 133-141.

Cetin, H., Sahin, B. N., Ayyildiz, E., & Turut, A., (2005). Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation. PHYSICA B-CONDENSED MATTER , vol.364, 133-141.

Cetin, H Et Al. "Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation," PHYSICA B-CONDENSED MATTER , vol.364, 133-141, 2005

Cetin, H Et Al. "Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation." PHYSICA B-CONDENSED MATTER , vol.364, pp.133-141, 2005

Cetin, H. Et Al. (2005) . "Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation." PHYSICA B-CONDENSED MATTER , vol.364, pp.133-141.

@article{article, author={H Cetin Et Al. }, title={Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation}, journal={PHYSICA B-CONDENSED MATTER}, year=2005, pages={133-141} }