CELEBI, F. Et Al. 1998. The effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55 mu m. InGaAsP semiconductor laser diodes. SPIE Conference on Laser Diodes and Applications III , (Quebec, Canada), 57-61.

CELEBI, F., OZYAZICI, M., & Danisman, K., (1998). The effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55 mu m. InGaAsP semiconductor laser diodes . SPIE Conference on Laser Diodes and Applications III (pp.57-61). Quebec, Canada

CELEBI, FV, MS OZYAZICI, And KENAN DANIŞMAN. "The effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55 mu m. InGaAsP semiconductor laser diodes," SPIE Conference on Laser Diodes and Applications III, Quebec, Canada, 1998

CELEBI, FV Et Al. "The effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55 mu m. InGaAsP semiconductor laser diodes." SPIE Conference on Laser Diodes and Applications III , Quebec, Canada, pp.57-61, 1998

CELEBI, F. OZYAZICI, M. And Danisman, K. (1998) . "The effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55 mu m. InGaAsP semiconductor laser diodes." SPIE Conference on Laser Diodes and Applications III , Quebec, Canada, pp.57-61.

@conferencepaper{conferencepaper, author={FV CELEBI Et Al. }, title={The effect of nonradiative recombination coefficient and gain saturation parameter on second harmonic distortion in 1.55 mu m. InGaAsP semiconductor laser diodes}, congress name={SPIE Conference on Laser Diodes and Applications III}, city={Quebec}, country={Canada}, year={1998}, pages={57-61} }