AYYILDIZ, E. 1999. Dependence of Thermal Annealing on the Density Distribution of Interface States In Ti/n-GaAs(Te) Schottky Diodes. Appl. Surf. Sci. , vol.152 , 57-62.

AYYILDIZ, E., (1999). Dependence of Thermal Annealing on the Density Distribution of Interface States In Ti/n-GaAs(Te) Schottky Diodes. Appl. Surf. Sci. , vol.152, 57-62.

AYYILDIZ, ENİSE. "Dependence of Thermal Annealing on the Density Distribution of Interface States In Ti/n-GaAs(Te) Schottky Diodes," Appl. Surf. Sci. , vol.152, 57-62, 1999

AYYILDIZ, ENİSE. "Dependence of Thermal Annealing on the Density Distribution of Interface States In Ti/n-GaAs(Te) Schottky Diodes." Appl. Surf. Sci. , vol.152, pp.57-62, 1999

AYYILDIZ, E. (1999) . "Dependence of Thermal Annealing on the Density Distribution of Interface States In Ti/n-GaAs(Te) Schottky Diodes." Appl. Surf. Sci. , vol.152, pp.57-62.

@article{article, author={ENİSE AYYILDIZ}, title={Dependence of Thermal Annealing on the Density Distribution of Interface States In Ti/n-GaAs(Te) Schottky Diodes}, journal={Appl. Surf. Sci.}, year=1999, pages={57-62} }