E. AYYILDIZ Et Al. , "The Effect of RF Power and Sputtering Background Pressure on Structural Properties of a:Si," 2nd International Congress on Semiconductor Materials and Devices (ICSMD2018) , Ardahan, Turkey, pp.57, 2018
AYYILDIZ, E. Et Al. 2018. The Effect of RF Power and Sputtering Background Pressure on Structural Properties of a:Si. 2nd International Congress on Semiconductor Materials and Devices (ICSMD2018) , (Ardahan, Turkey), 57.
AYYILDIZ, E., AKKAYA, A., GÜNERİ, E., SOYLU, M. Ç., & ÇETİN, H., (2018). The Effect of RF Power and Sputtering Background Pressure on Structural Properties of a:Si . 2nd International Congress on Semiconductor Materials and Devices (ICSMD2018) (pp.57). Ardahan, Turkey
AYYILDIZ, ENİSE Et Al. "The Effect of RF Power and Sputtering Background Pressure on Structural Properties of a:Si," 2nd International Congress on Semiconductor Materials and Devices (ICSMD2018), Ardahan, Turkey, 2018
AYYILDIZ, ENİSE Et Al. "The Effect of RF Power and Sputtering Background Pressure on Structural Properties of a:Si." 2nd International Congress on Semiconductor Materials and Devices (ICSMD2018) , Ardahan, Turkey, pp.57, 2018
AYYILDIZ, E. Et Al. (2018) . "The Effect of RF Power and Sputtering Background Pressure on Structural Properties of a:Si." 2nd International Congress on Semiconductor Materials and Devices (ICSMD2018) , Ardahan, Turkey, p.57.
@conferencepaper{conferencepaper, author={ENİSE AYYILDIZ Et Al. }, title={The Effect of RF Power and Sputtering Background Pressure on Structural Properties of a:Si}, congress name={2nd International Congress on Semiconductor Materials and Devices (ICSMD2018)}, city={Ardahan}, country={Turkey}, year={2018}, pages={57} }